• DocumentCode
    2767227
  • Title

    Fracture toughness of si thin film at very low temperatures by tensile test

  • Author

    Ando, T. ; Takumi, T. ; Nozue, S. ; Sato, K.

  • Author_Institution
    Ritsumeikan Univ., Kusatsu, Japan
  • fYear
    2011
  • fDate
    23-27 Jan. 2011
  • Firstpage
    436
  • Lastpage
    439
  • Abstract
    A measurement system was newly developed to evaluate the mechanical properties of micro-sized materials at very low temperature ranging from -130°C to room temperature, using liquid nitrogen cooling. In this work, we conducted the fracture toughness tests of single crystal silicon films with thicknesses of about 1 μm at low temperature and found the temperature dependence on the fracture toughness, especially the drastically change between -20 and -50°C. A change of fracture behavior was also observed in the fracture specimens, from simple cleavage on the (110) surface at lower temperature to the (111) at higher. These results suggest that the transition of the fracture mode is similar to usual behavior that is variation from brittle failure to ductile observed over 600°C in bulk silicon.
  • Keywords
    ductile-brittle transition; elemental semiconductors; fracture toughness testing; semiconductor thin films; silicon; tensile testing; Si; brittle failure; bulk silicon; ductile failure; fracture toughness tests; liquid nitrogen cooling; mechanical properties; microsized materials; silicon thin film; tensile test; Silicon; Temperature control; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
  • Conference_Location
    Cancun
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-9632-7
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2011.5734455
  • Filename
    5734455