DocumentCode :
2767227
Title :
Fracture toughness of si thin film at very low temperatures by tensile test
Author :
Ando, T. ; Takumi, T. ; Nozue, S. ; Sato, K.
Author_Institution :
Ritsumeikan Univ., Kusatsu, Japan
fYear :
2011
fDate :
23-27 Jan. 2011
Firstpage :
436
Lastpage :
439
Abstract :
A measurement system was newly developed to evaluate the mechanical properties of micro-sized materials at very low temperature ranging from -130°C to room temperature, using liquid nitrogen cooling. In this work, we conducted the fracture toughness tests of single crystal silicon films with thicknesses of about 1 μm at low temperature and found the temperature dependence on the fracture toughness, especially the drastically change between -20 and -50°C. A change of fracture behavior was also observed in the fracture specimens, from simple cleavage on the (110) surface at lower temperature to the (111) at higher. These results suggest that the transition of the fracture mode is similar to usual behavior that is variation from brittle failure to ductile observed over 600°C in bulk silicon.
Keywords :
ductile-brittle transition; elemental semiconductors; fracture toughness testing; semiconductor thin films; silicon; tensile testing; Si; brittle failure; bulk silicon; ductile failure; fracture toughness tests; liquid nitrogen cooling; mechanical properties; microsized materials; silicon thin film; tensile test; Silicon; Temperature control; Temperature dependence; Temperature distribution; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
ISSN :
1084-6999
Print_ISBN :
978-1-4244-9632-7
Type :
conf
DOI :
10.1109/MEMSYS.2011.5734455
Filename :
5734455
Link To Document :
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