Determination of diffusion length of p-type GaN from spectral-response measurements

Author

Wee, Danny ; Parish, Giacinta ; Nener, Brett

Author_Institution

Western Australia Univ., Perth

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

264

Lastpage

267

Abstract

An alternative method of extracting diffusion length, L, from the spectral response of a Mg-doped GaN Schottky photodiode using the charge carrier collection probability profile is investigated. The collection probability, phi(z) is defined as the probability that a photogenerated charge carrier at depth z will contribute to the measured short-circuit photocurrent. Using this method, the diffusion length is estimated to be approximately 10 nm.

Keywords

III-V semiconductors; Laplace transforms; Schottky diodes; gallium compounds; magnesium; photoconductivity; photodiodes; probability; GaN:Mg; Laplace transform; charge carrier collection probability profile; diffusion length determination; magnesium doped GaN Schottky photodiode; photogenerated charge carrier; short-circuit photocurrent measurement; spectral-response measurements; Charge carriers; Charge measurement; Current measurement; Gallium nitride; Indium tin oxide; Length measurement; Photoconductivity; Photodiodes; Radiative recombination; Semiconductor materials; GaN; Laplace transform; Schottky photodiodes; collection probability; diffusion length;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429932

Filename

4429932