Title :
Local stress analysis of single crystalline silicon resonator using micro Raman spectroscopy
Author :
Taniyama, A. ; Hirai, Y. ; Sugano, K. ; Tabata, O. ; Ikehara, T. ; Tsuchiya, T.
Author_Institution :
Kyoto Univ., Kyoto, Japan
Abstract :
This paper reports a method for analyzing local stress in resonating single-crystal silicon (SCS) microstructures of various crystal orientations using micro Raman spectroscopy. The notched support beams of fan-shaped in-plane resonators were used as specimens. The specimens have five different crystallographic orientations. The spectra at notch tips were calculated using the Raman spectrum of Si without stress and the stress distribution analyzed by finite element method (FEM). The measured spectra of all (100) and most of (110) specimens showed good agreement with the analyzed ones, which indicates the validity of this method.
Keywords :
Raman spectra; crystal orientation; elemental semiconductors; finite element analysis; silicon; stress analysis; Si; crystal orientations; finite element method; local stress analysis; micro Raman spectroscopy; single crystalline silicon resonator; stress distribution; Finite element methods; Phonons; Raman scattering; Semiconductor device measurement; Stress measurement; Tensile stress;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-9632-7
DOI :
10.1109/MEMSYS.2011.5734458
