Temperature and Gravity Dependent I-V Characteristics of Organic Semiconductor Diode

In this study thin films of Poly-N Epoxipropylcarbazole (PEPC) doped by anthracene (An) were deposited over the surface of nickel substrate at different gravity conditions as 1 g, 123 g, 277 g and 1107 g (where g = 9.81 m/sec). The Current-Voltage (I-V) characteristics of the devices (Ga/PEPC/Ni) were determined at different ambient temperature environment ranging from 30degC to 60degC with different gravity specifications. From the conductivity versus temperature response of the samples at different gravity conditions, derived from their I-V characteristics, it is observed that devices follow three dimension variable range hopping phenomena for their charge transport mechanism. By applying variable range hopping model, hopping conduction parameters of organic semiconductor material are estimated. From the results of these estimations, the dependence of electrical properties of the devices as a function of gravity as well as temperature is evaluated and discussed. It is also observed that device fabricated at 277 g shows good electrical response as compared to the device fabricated at other gravity conditions.