Poisson-SchrÃ¶dinger Model in the Analysis of Coupled Effects in Quantum Well Nanostructures

Author

Mahapatra, Roy D. ; Melnik, Roderick V N ; Willatzen, Morten ; Lassen, Benny ; Voon, Lok Lew Yan

Author_Institution

Wilfrid Laurier Univ., Waterloo

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

280

Lastpage

282

Abstract

In this contribution, we implement a self-consistent procedure for the solution of the Poisson-Schrodinger model applied here for the analysis of coupled effects in wide bandgap wurtzite heterostructures. Such effects are demonstrated on examples for three-layer systems, in particular AlN/GaN quantum well heterojunctions, which are promising components in a number of optoelectronic device applications. A major emphasis is given to the effects of boundary conditions, piezoelectricity and spontaneous polarization.

Keywords

III-V semiconductors; Schrodinger equation; aluminium compounds; gallium compounds; nanostructured materials; piezoelectricity; quantum wells; AlN-GaN; Poisson-Schrodinger model; coupled effects; optoelectronic device; piezoelectricity; quantum well heterojunctions; quantum well nanostructures; spontaneous polarization; wide bandgap wurtzite heterostructures; Capacitive sensors; Charge carrier processes; Coupled mode analysis; Gallium nitride; Nanostructures; Piezoelectric polarization; Piezoelectricity; Poisson equations; Quantum computing; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429936

Filename

4429936