Title :
Poisson-Schrödinger Model in the Analysis of Coupled Effects in Quantum Well Nanostructures
Author :
Mahapatra, Roy D. ; Melnik, Roderick V N ; Willatzen, Morten ; Lassen, Benny ; Voon, Lok Lew Yan
Author_Institution :
Wilfrid Laurier Univ., Waterloo
Abstract :
In this contribution, we implement a self-consistent procedure for the solution of the Poisson-Schrodinger model applied here for the analysis of coupled effects in wide bandgap wurtzite heterostructures. Such effects are demonstrated on examples for three-layer systems, in particular AlN/GaN quantum well heterojunctions, which are promising components in a number of optoelectronic device applications. A major emphasis is given to the effects of boundary conditions, piezoelectricity and spontaneous polarization.
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; gallium compounds; nanostructured materials; piezoelectricity; quantum wells; AlN-GaN; Poisson-Schrodinger model; coupled effects; optoelectronic device; piezoelectricity; quantum well heterojunctions; quantum well nanostructures; spontaneous polarization; wide bandgap wurtzite heterostructures; Capacitive sensors; Charge carrier processes; Coupled mode analysis; Gallium nitride; Nanostructures; Piezoelectric polarization; Piezoelectricity; Poisson equations; Quantum computing; Tensile stress;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429936
