• DocumentCode
    2767383
  • Title

    Investigation of aging effects in porous silicon

  • Author

    James, T.D. ; Steer, A. ; Musca, C.A. ; Parish, G. ; Keating, A. ; Faraone, L.

  • Author_Institution
    Univ. of Western Australia, Crawley
  • fYear
    2006
  • fDate
    6-8 Dec. 2006
  • Firstpage
    290
  • Lastpage
    293
  • Abstract
    Porous silicon has many properties useful for optics applications, which include an ability to produce thin films with a wide range of refractive indices and the ability to easily fabricate multilayer structures. However porous silicon does have some non-optimal properties due to the very nature of its porous structure, namely its large surface area. The porous silicon surface is quite reactive making properties of porous silicon thin films, such as refractive index, unstable in an ambient environment. The purpose of this work is to investigate the aging of porous silicon and the effects of aging on the optical and physical properties of the thin films. Reflectance and FTIR spectroscopy are used to investigate the porous silicon layers by observing shifts in optical thickness and changes in chemical structure of the thin films. The aging process was simulated by annealing samples at temperatures such that only reactions that occur at room temperature were promoted.
  • Keywords
    Fourier transform spectra; ageing; annealing; elemental semiconductors; infrared spectra; optical fabrication; optical multilayers; porous semiconductors; refractive index; semiconductor thin films; silicon; FTIR spectroscopy; Si; aging effects; annealing; chemical structure; multilayer structure fabrication; optical thickness; physical properties; porous silicon thin films; porous structure; refractive indices; Aging; Nonhomogeneous media; Optical films; Optical refraction; Optical variables control; Reflectivity; Refractive index; Semiconductor thin films; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    978-1-4244-0578-7
  • Electronic_ISBN
    978-1-4244-0578-7
  • Type

    conf

  • DOI
    10.1109/COMMAD.2006.4429939
  • Filename
    4429939