Author :
Lourdudoss, S. ; Olsson, F. ; Barrios, C.A. ; Hakkarainen, T. ; Berrier, A. ; Anand, S. ; Aubert, A. ; Berggren, J. ; Broeke, R.G. ; Cao, J. ; Chubun, N. ; Seo, S.-W. ; Baek, J.-H. ; Aihara, K. ; Pham, Anh-Vu ; Yoo, S. J Ben ; Avella, M. ; Jimenez, J.
Abstract :
We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for optical code division multiplex access (OCDMA) networking applications.
Keywords :
III-V semiconductors; code division multiplexing; indium compounds; integrated optics; nanotechnology; silicon-on-insulator; InP; Si; heteroepitaxy; nanopillar fabrication; networking; optical code division multiplex access; photonic integrated device; selective epitaxy; silicon on insulator; Arrayed waveguide gratings; Epitaxial growth; Indium phosphide; Optical arrays; Optical devices; Optical surface waves; Optical waveguides; Phased arrays; Silicon on insulator technology; Substrates; Heteroepitaxy; Hydride vapour phase epitaxy; OCDMA devices; nanopillars; selective epitaxy;
