Title :
Development of the BOLVAPS/LIBORS lithium ion source for the PBFA II accelerator
Author :
Dreike ; Tisone, G.C. ; Appel ; Gerstle ; Lamppa ; Mattox ; McCollister ; Moore ; Renk, Timothy J.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Summary Form only given, as follows. A millimeter-thickness 10/sup 16/-10/sup 17/-cm/sup -3/ Li plasma ion source for the PBFA II applied-B ion diode is described. BOLVAPS (Boil-Off Lithium VAPor Source) is a technique for making a thin layer of Li vapor by rapid ohmic heating of a thin-film laminate, one layer of which contains Li. LIBORS (Laser Ionization Based On Resonance Saturation) is a technique for ionizing Li using light tuned to the 670.8-nm Li transition. BOLVAPS films consist of a 3-5- mu m-thick Mo layer, a 1- mu m LiAg layer, and a 0.3- mu m Ag overcoat. In operation, BOLVAPS films are preheated to 700 degrees C for approximately 10 ms to melt the LiAg and outgas volatile contaminants, and then heated to 1100-1200 degrees C for 500 ns to evaporate high-density Li. In small-scale tests with films on polished alumina, using 40 mJ/cm/sup 2/ of laser light, Li plasmas with average electron densities of 2*10/sup 16/ cm/sup -3/ and a thickness of 2 mm were made. Construction of the source is underway.<>
Keywords :
lithium; plasma density; plasma diodes; plasma production; 1100 to 1200 degC; 500 ns; 670.8 nm; Ag; Ag overcoat; Li; Li plasma ion source; Li plasmas; Li transition; LiAg; Mo; PBFA II accelerator; PBFA II applied-B ion diode; boil-off Li vapour source; electron densities; film preheating; high-density Li; laser ionisation based on resonance saturation; ohmic heating; polished alumina; thin vapour layer; thin-film laminate; volatile contaminants; Diodes; Lithium; Plasma devices; Plasma generation; Plasma properties;
Conference_Titel :
Plasma Science, 1989. IEEE Conference Record - Abstracts., 1989 IEEE International Conference on
Conference_Location :
Buffalo, NY, USA
DOI :
10.1109/PLASMA.1989.166044
