DocumentCode
2768097
Title
The Design of MOS-NDR-Based Cellular Neural Network
Author
Liang, Dong-Shong ; Chen, Yaw-Hwang ; Wen, Chun-Min ; Tu, Chun-Da ; Gan, Kwang-Jow ; Tsai, Cher-Shiung
Author_Institution
Kun Shan Univ., Tainan
fYear
0
fDate
0-0 0
Firstpage
1033
Lastpage
1035
Abstract
The cell of cellular neural network (CNN) studied in this work is realized by negative differential resistance (NDR) devices. The NDR device is composed of metal-oxide semiconductor field-effect transistor (MOS) devices. Therefore, we can fabricate the cellular neural network by standard CMOS or BiCMOS process.
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; cellular neural nets; neural chips; BiCMOS process; CMOS; MOS-NDR-based cellular neural network; metal-oxide semiconductor field-effect transistor devices; negative differential resistance devices; Cellular neural networks; Circuits; Electrodes; Gallium nitride; Kirchhoff´s Law; MOSFETs; Nonlinear equations; Resistors; Switches; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Neural Networks, 2006. IJCNN '06. International Joint Conference on
Conference_Location
Vancouver, BC
Print_ISBN
0-7803-9490-9
Type
conf
DOI
10.1109/IJCNN.2006.246801
Filename
1716212
Link To Document