Title :
The Design of MOS-NDR-Based Cellular Neural Network
Author :
Liang, Dong-Shong ; Chen, Yaw-Hwang ; Wen, Chun-Min ; Tu, Chun-Da ; Gan, Kwang-Jow ; Tsai, Cher-Shiung
Author_Institution :
Kun Shan Univ., Tainan
Abstract :
The cell of cellular neural network (CNN) studied in this work is realized by negative differential resistance (NDR) devices. The NDR device is composed of metal-oxide semiconductor field-effect transistor (MOS) devices. Therefore, we can fabricate the cellular neural network by standard CMOS or BiCMOS process.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; cellular neural nets; neural chips; BiCMOS process; CMOS; MOS-NDR-based cellular neural network; metal-oxide semiconductor field-effect transistor devices; negative differential resistance devices; Cellular neural networks; Circuits; Electrodes; Gallium nitride; Kirchhoff´s Law; MOSFETs; Nonlinear equations; Resistors; Switches; Voltage control;
Conference_Titel :
Neural Networks, 2006. IJCNN '06. International Joint Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-9490-9
DOI :
10.1109/IJCNN.2006.246801
