DocumentCode
276818
Title
IEE Colloquium on `Sub-Micron VLSI Reliability´ (Digest No.002)
fYear
1992
fDate
33611
Abstract
The following topics were dealt with: gate current suppression in buried LDD MOSFETs; hot carrier-reliability in NMOS transistors; trap generation studied on MOSFET gate oxide; self-heating effects in SOI MOSFETs; structural analysis of packaged VLSI devices; and failure analysis of submicron VLSI memory devices
Keywords
MOS integrated circuits; VLSI; circuit reliability; failure analysis; integrated circuit technology; integrated circuit testing; monolithic integrated circuits; MOSFET gate oxide; NMOS transistors; SAM; SOI MOSFETs; buried LDD MOSFETs; failure analysis; failure mechanisms; gate current suppression; hot carrier-reliability; lightly doped drain; monolithic IC; optimised drain structures; packaged VLSI devices; scanning acoustic microscopy; self-heating effects; structural analysis; submicron VLSI memory devices; submicron VLSI reliability; trap generation;
fLanguage
English
Publisher
iet
Conference_Titel
Sub-Micron VLSI Reliability, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
167549
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