Title :
A current mirror method for thermal instability of SOI BJT
Author :
Kim, Jonggook ; Liu, Yun ; De Santis, Joseph A.
Author_Institution :
Adv. Process Technol. Dev., Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
A current mirror method is propose in this paper to evaluate thermal issues in silicon-on -insulator (SOI) bipolar junction transistors (BJTs) accompanied by conventional transistor level methods. It can provide quantitative analysis for thermal instability in the whole range of power, even in the safe operating area (SOA) derived from conventional transistor methods. The change of SOA is also investigated by current mirror with an emitter degeneration resistor and various thermal resistances using a VBIC model.
Keywords :
bipolar transistors; current mirrors; silicon-on-insulator; transistor circuits; SOI BJT; VBIC model; conventional transistor level methods; current mirror method; emitter degeneration resistor; safe operating area; thermal instability; Current density; Feedback; Mirrors; Power transistors; Resistors; Semiconductor optical amplifiers; Silicon on insulator technology; Temperature; Thermal resistance; Voltage control;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283298
