Title :
DC and AC hot-carrier characteristics of partially depleted SOI MOSFETS with ultra-thin gate dielectrics
Author :
Zhao, Eugene ; Chan, Jay ; Zhang, John ; Marathe, Amit ; Taylor, Kurt
Author_Institution :
AMD, Sunnyvale, CA, USA
Abstract :
With the introduction of ultra-thin (<15Å) gate dielectrics especially DPN (decoupled plasma nitridation), which has a significantly higher nitrogen concentration, and thus a higher dielectric constant, various transistor reliability issues such as DC and AC HCI (hot carrier injection) characteristics need to be revisited and compared with that of previous generation technologies, such as furnace-NO (F-NO). In this paper, the following HCI characteristics will be carefully investigated and compared: furnace-NO versus DPN; NFET versus PFET: bulk versus SOI; polythickness effect; HCI temperature and thickness dependence in DPN.
Keywords :
MOSFET; dielectric thin films; hot carriers; silicon-on-insulator; HCI temperature; NFET; PFET; SOI MOSFETS; decoupled plasma nitridation; dielectric constant; furnace-NO; hot carrier injection; nitrogen concentration; polythickness effect; transistor reliability; ultra-thin gate dielectrics; AC generators; Character generation; DC generators; High-K gate dielectrics; Hot carrier injection; Hot carriers; Human computer interaction; MOSFETs; Nitrogen; Plasma properties;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283299
