DC and AC hot-carrier characteristics of partially depleted SOI MOSFETS with ultra-thin gate dielectrics

Author

Zhao, Eugene ; Chan, Jay ; Zhang, John ; Marathe, Amit ; Taylor, Kurt

Author_Institution

AMD, Sunnyvale, CA, USA

fYear

2003

fDate

20-23 Oct. 2003

Firstpage

49

Lastpage

51

Abstract

With the introduction of ultra-thin (<15Å) gate dielectrics especially DPN (decoupled plasma nitridation), which has a significantly higher nitrogen concentration, and thus a higher dielectric constant, various transistor reliability issues such as DC and AC HCI (hot carrier injection) characteristics need to be revisited and compared with that of previous generation technologies, such as furnace-NO (F-NO). In this paper, the following HCI characteristics will be carefully investigated and compared: furnace-NO versus DPN; NFET versus PFET: bulk versus SOI; polythickness effect; HCI temperature and thickness dependence in DPN.

Keywords

MOSFET; dielectric thin films; hot carriers; silicon-on-insulator; HCI temperature; NFET; PFET; SOI MOSFETS; decoupled plasma nitridation; dielectric constant; furnace-NO; hot carrier injection; nitrogen concentration; polythickness effect; transistor reliability; ultra-thin gate dielectrics; AC generators; Character generation; DC generators; High-K gate dielectrics; Hot carrier injection; Hot carriers; Human computer interaction; MOSFETs; Nitrogen; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2003 IEEE International

Print_ISBN

0-7803-8157-2

Type

conf

DOI

10.1109/IRWS.2003.1283299

Filename

1283299