DocumentCode :
2768253
Title :
Si acoustic delay lines and the effect of current on accoustic wave attenuation and speed
Author :
Chen, Lingyao ; Tabib-Azar, Massood
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Utah, Salt Lake City, UT, USA
fYear :
2011
fDate :
23-27 Jan. 2011
Firstpage :
633
Lastpage :
635
Abstract :
We studied the effect of excess carriers, temperature and current on acoustic waves in silicon delay lines. Heat and excess carriers reduce the acoustic velocity by respectively reducing the Young´s modulus and through the deformation potential. Electrical current, on the other hand, can increase the acoustic velocity depending on their drift velocity. In addition to current, acoustic waves can also be controlled through field effect and modulation of depletion width in periodic p-n junctions embedded in the delay line.
Keywords :
Young´s modulus; acoustic wave absorption; acoustic wave velocity; acoustoelectric effects; deformation; elemental semiconductors; p-n junctions; silicon; surface acoustic wave delay lines; Young´s modulus; acoustic velocity; acoustic wave attenuation; acoustic wave speed; current effect; deformation potential; p-n junctions; silicon acoustic delay lines; Acoustic waves; Attenuation; Delay lines; Electrodes; Silicon; Slabs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
ISSN :
1084-6999
Print_ISBN :
978-1-4244-9632-7
Type :
conf
DOI :
10.1109/MEMSYS.2011.5734504
Filename :
5734504
Link To Document :
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