• DocumentCode
    2768260
  • Title

    Study of GaAsN thin film structures by X-ray reciprocal space mapping for multi-junction solar cell application

  • Author

    Suzuki, H. ; Kojima, N. ; Ohshita, Y. ; Yamaguchi, M.

  • Author_Institution
    Interdiscipl. Res. Organ., Univ. of Miyazaki, Miyazaki, Japan
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Structural difference between high and low N induced scattering center (SCN) concentration GaAsN films grown on GaAs substrates has been investigated by X-ray reciprocal space mapping technique. Difference has been observed in diffuse scattering around GaAsN 004 and GaAs 004 Bragg peak, which is attributed to misfit dislocation at the interface of GaAsN/GaAs. With decreasing SCN, intensity of diffuse scattering increases. These results indicate that SCN prevent the generation and/or gliding of misfit dislocations.
  • Keywords
    arsenic compounds; gallium compounds; nitrogen compounds; solar cells; thin film devices; Bragg peak; GaAsN; X-ray reciprocal space mapping; diffuse scattering; induced scattering center; misfit dislocation; multijunction solar cell; thin film structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616192
  • Filename
    5616192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2768260