Study of GaAsN thin film structures by X-ray reciprocal space mapping for multi-junction solar cell application

Structural difference between high and low N induced scattering center (SC_N) concentration GaAsN films grown on GaAs substrates has been investigated by X-ray reciprocal space mapping technique. Difference has been observed in diffuse scattering around GaAsN 004 and GaAs 004 Bragg peak, which is attributed to misfit dislocation at the interface of GaAsN/GaAs. With decreasing SC_N, intensity of diffuse scattering increases. These results indicate that SC_N prevent the generation and/or gliding of misfit dislocations.