Leakage current recovery in SRAM after AC stressing

Author

Payan, Cesar ; Kumar, Santosh ; Thupil, Ajit ; Kasichainula, Sridhar ; Knowlton, William B.

Author_Institution

Cypress Semicond., San Jose, CA, USA

fYear

2003

fDate

20-23 Oct. 2003

Firstpage

67

Lastpage

70

Abstract

A recovery of sub-threshold current, measured as standby current has been seen on static random access memory (SRAM) devices after AC stress. A theoretical model is presented to explain the observed data in this paper. A trapped charge model is proposed for decrease in subthreshold current leading to lower observed standby current on continuous negative unipolar write stress. Several mechanisms have been proposed earlier such as Poole-Frenkel enhanced emission from traps, trap assisted tunneling, and band-to-band tunneling to explain possible source of off current.

Keywords

Poole-Frenkel effect; SRAM chips; interface states; tunnelling; AC stressing; Poole-Frenkel enhanced emission; SRAM devices; band-to-band tunneling; charge traps; leakage current recovery; off-current; standby current; subthreshold current; trapped charge model; CMOS process; CMOS technology; Current measurement; Electron traps; Leakage current; Random access memory; Stress; Variable structure systems; Voltage; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2003 IEEE International

Print_ISBN

0-7803-8157-2

Type

conf

DOI

10.1109/IRWS.2003.1283303

Filename

1283303