Title :
Dielectric reliability studies of metal insulator metal capacitors (MIMCAP) with SiN dielectric under unipolar to bipolar AC-stress
Author :
Schwab, R. ; Allers, K.H.
Author_Institution :
Reliability Dept., Infineon Technol. AG, Munich, Germany
Abstract :
We present AC stress and TDDB results on silicon nitride MIMCAPSs with unipolar and bipolar stress amplitudes. Two different nitride types are investigated in the frequency range of 0.1 Hz to 100 kHz. For pure bipolar stress amplitudes we find an enormous enhancement of the time to breakdown compared to the DC-reference. This enhancement is dependent on the nitride type. We propose that the strong lifetime enhancement is related to an increased trapping and an enhancement is related to an increased trapping and an enhance charge to breakdown at bipolar stress. For the non-bipolar stress case, i.e. biased AC stress, the lifetime enhancement can be estimated by a duty cycle approach which considers the effective duration of stress when fields varying over time are involved. The results confirm that a DC reliability assessment of nitride MIMCAP is worst case.
Keywords :
MIM devices; dielectric thin films; integrated circuit reliability; nitrogen compounds; silicon compounds; thin film capacitors; 0.1 to 100 kHz; DC reliability assessment; DC-reference; SiN; bipolar AC stress; dielectric reliability; lifetime enhancement; metal insulator metal capacitors; pure bipolar stress amplitudes; silicon nitride MIMCAPSs; trapping; unipolar AC stress; Breakdown voltage; Capacitors; Dielectrics and electrical insulation; Electric breakdown; Frequency; Leakage current; Metal-insulator structures; Silicon compounds; Stress; Testing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283306