Title :
Effect of new processes of inter-layer-dielectric on plasma charging damage in 0.13μ dual gate oxide
Author :
Lu, Wen Hui ; Ko, Lian Hoon ; Andrew, Kin Leong Yap ; Lo, Keng Foo
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
New processes of Inter-Layer-Dielectric (ILD) in 0.13μm dual gate oxide have been developed. Etch stop liner (ESL) changes from single stack SiN to dual stack ESL (SiON/SiN) and helium cooling is added during ILD high density plasma (HDP) film deposition. The plasma charging damage is investigated on new and old ILD process. Gate leakage of related antenna structures is measured. It is found from our study that new process changes can reduce thin 1.2V and thick 2.5V/3.3V gate leakage of antenna structures. So plasma charging damage is reduced by new ILD.
Keywords :
dielectric thin films; integrated circuit interconnections; plasma deposition; silicon compounds; 0.13 micron; 1.2 V; 2.5 V; 3.3 V; ILD high density plasma film deposition; O; Si; antenna structures; dual gate oxide; dual stack ESL; etch stop liner; gate leakage; helium cooling; interlayer dielectric; plasma charging damage; single stack silicon nitride; Antenna measurements; CMOS technology; Copper; Etching; Gate leakage; Plasma applications; Plasma density; Plasma devices; Plasma measurements; Silicon compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283311
