Title :
A design technique to reduce hot carrier effect
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas, Arlington, TX, USA
Abstract :
In order to reduce the hot carrier (HC) effect, some specific design techniques need to be developed and applied to the circuit design. In this paper, HC induced MOSFET parameter degradations are investigated experimentally, and different low noise amplifier (LNA) architectures are evaluated in terms of HC induced performance degradations. A generalized design technique is proposed to reduce HC effect on circuits.
Keywords :
hot carriers; integrated circuit design; HC induced performance degradations; MOSFET parameter degradation; circuit design; hot carrier effect reduction; low noise amplifier architectures; Circuit noise; Circuit optimization; Circuit testing; Degradation; Hot carrier effects; Hot carriers; Low-noise amplifiers; Scattering parameters; Semiconductor device noise; Stress;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283316
