DocumentCode
2768562
Title
Effect of reverse measurement on the HC instability evaluation of MOSFETs
Author
Katto, H.
Author_Institution
Tokyo Univ. of Sci., Suwa, Japan
fYear
2003
fDate
20-23 Oct. 2003
Firstpage
124
Lastpage
127
Abstract
Anomalous hot-carrier (HC) degradation is found in some products attributable to the reverse device measurement. Disproportionately great reverse degradation is found the core problem. Assuming that the HC degradation is a power function of time, the anomalous degradation is theoretically characterized using the parameters of HC degradation. It is confirmed that the time-dependence slope in the reverse direction and voltage dependence factor are important parameters.
Keywords
MOSFET circuits; hot carriers; semiconductor device reliability; HC instability evaluation; MOSFETs; anomalous hot-carrier degradation; circuit reliability; hot carrier; power function; reverse degradation; reverse device measurement; reverse measurement; voltage dependence; Current measurement; Degradation; Hot carriers; Intrusion detection; MOSFETs; Power supplies; Scattering; Stress measurement; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN
0-7803-8157-2
Type
conf
DOI
10.1109/IRWS.2003.1283317
Filename
1283317
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