Title :
Effect of reverse measurement on the HC instability evaluation of MOSFETs
Author_Institution :
Tokyo Univ. of Sci., Suwa, Japan
Abstract :
Anomalous hot-carrier (HC) degradation is found in some products attributable to the reverse device measurement. Disproportionately great reverse degradation is found the core problem. Assuming that the HC degradation is a power function of time, the anomalous degradation is theoretically characterized using the parameters of HC degradation. It is confirmed that the time-dependence slope in the reverse direction and voltage dependence factor are important parameters.
Keywords :
MOSFET circuits; hot carriers; semiconductor device reliability; HC instability evaluation; MOSFETs; anomalous hot-carrier degradation; circuit reliability; hot carrier; power function; reverse degradation; reverse device measurement; reverse measurement; voltage dependence; Current measurement; Degradation; Hot carriers; Intrusion detection; MOSFETs; Power supplies; Scattering; Stress measurement; Testing; Threshold voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283317
