Title :
Effect of nitrogen incorporation on PMOS negative bias temperature instability in ultrathin oxi-nitrides
Author :
Duong, Lesly ; Li, Erhong ; Gopinath, Venkatesh ; Prasad, Sharad ; Lin, Joyce ; Pachura, David ; Hornback, V.
Author_Institution :
Characterization & Reliability, LSI Logic Corp., Milpitas, CA, USA
Abstract :
This work reports the effect of nitrogen incorporation on negative bias temperature instability (NBTI) of PMOS devices with 1.4 nm equivalent oxide thickness. It is found that for these ultra-thin oxynitrides, the linear threshold voltage degrades faster with higher content of nitrogen using both constant voltage and constant field methods.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; nitrogen compounds; semiconductor doping; stability; PMOS devices; constant field methods; constant voltage; linear threshold voltage; negative bias temperature instability; nitrogen; ultrathin oxinitrides; CMOS technology; Degradation; Dielectrics; Frequency; MOS devices; Negative bias temperature instability; Niobium compounds; Nitrogen; Threshold voltage; Titanium compounds;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283318
