Title :
Reliability of dielectric barriers in copper damascene applications
Author :
Lee, Albert S. ; Lakshmanan, Annamalai ; Rajagopalan, Nagarajan ; Cui, Zhenjiang ; Le, Maggie ; Xia, Li Qun ; Kim, Bok Heon ; M´saad, Hichem
Author_Institution :
Dielectric Syst. & Modules Product Bus. Group, Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
The film properties of two PECVD deposited dielectric copper barrier films have been optimized to improve BEOL device reliability in terms of electromigration. Two critical aspects that affect electromigration are the dielectric barrier film hermeticity and adhesion to copper. We use a method to quantify the barrier film hermeticity of the BLO/spl kappa/ I low-/spl kappa/ dielectric film to be similar to that of silicon nitride. In addition, the interfaces between damascene nitride with copper, as well as BLO/spl kappa/ I with copper have been engineered to improve the interfacial adhesion energy to >10 J/m/sup 2/ for both damascene nitride and BLO/spl kappa/ I.
Keywords :
copper; dielectric materials; electromigration; plasma CVD; reliability; BEOL device reliability; Cu; PECVD deposited dielectric copper barrier films; SiN; copper damascene; damascene nitride; dielectric barrier film hermeticity; dielectric barrier reliability; electromigration; film properties; interfacial adhesion energy; low-/spl kappa/ dielectric barrier film; silicon nitride; Adhesives; Compressive stress; Copper; Dielectric devices; Dielectric films; Dielectric thin films; Electromigration; Moisture; Silicon; Tensile stress;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283321
