A robust high power-handling (> 10 W) RF MEMS switched capacitor

We present the design, fabrication, and measurement of an RF MEMS switched capacitor with >; 10 W power handling at 10 GHz under hot-switching conditions while maintaining a relatively-low (<; 30 V) pull-in voltage. The device consists of separate RF and DC electrodes, which are defined underneath a temperature-stable circular beam, to result in a large spring constant above the RF electrode. The design increases both the restoring force above the RF electrode and the RF self-actuation voltage, resulting in improved power-handling capabilities with a pull-in voltage of only 24-28V. Measurements at 10 GHz of several switched capacitors show 10-11 W power handling, and <; 3 V change in the pull-in voltage from 0.2-10 W of incident power.