Phase noise shaping via forced nonlinearity in piezoelectrically actuated silicon micromechanical oscillators

Author

Pardo, M. ; Sorenson, L. ; Pan, W. ; Ayazi, F.

Author_Institution

Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

780

Lastpage

783

Abstract

This paper shows improved phase-noise performance of MEMS oscillators when the sustaining amplifier operates a lateral bulk acoustic wave AlN-on-Si resonator in the nonlinear regime. An empirical exponential-series-based model that closely describes the phase noise in nonlinearity is presented, reflecting the increased resonator filter order and the reduced amplifier flicker-noise contribution. An oscillator using a 23 MHz in-plane shear mode resonator with a quality factor of 4,000 exhibits a phase noise of -130 dBc/Hz at 1 KHz offset-frequency, corresponding to an improvement of about 20 dB with respect to linear operation.

Keywords

III-V semiconductors; aluminium compounds; amplifiers; elemental semiconductors; flicker noise; micromechanical resonators; oscillators; phase noise; piezoelectric devices; silicon; wide band gap semiconductors; AlN-Si; MEMS oscillators; Si; acoustic wave resonator; amplifier flicker-noise contribution; forced nonlinearity; frequency 23 MHz; increased resonator filter; inplane shear mode resonator; phase noise shaping; piezoelectrical actuated micromechanical oscillator; Electrodes; Micromechanical devices; Performance evaluation; Phase noise; Resonant frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734541

Filename

5734541