Title :
Silicon carbide lateral overtone bulk acoustic resonator with ultrahigh quality factor
Author :
Ziaei-Moayyed, M. ; Habermehl, S.D. ; Branch, D.W. ; Clews, P.J. ; Olsson, R.H., III
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
This work demonstrates a lateral overtone bulk acoustic resonator (LOBAR), which consists of an aluminum nitride (AlN) transducer coupled to a suspended thin silicon carbide (SiC) film fabricated using standard CMOS-compatible processes. The LOBAR design allows for high transduction efficiency and quality factors, by decoupling the transduction and energy storage schemes in the resonator. The frequency and bandwidth of the resonator were lithographically defined and controlled. A LOBAR operating at 2.93GHz with a Q greater than 100,000 in air was fabricated and characterized, having the highest reported f×Q product of any acoustic resonator to date.
Keywords :
CMOS integrated circuits; acoustic resonators; aluminium compounds; bulk acoustic wave devices; micromechanical resonators; piezoelectric transducers; silicon compounds; thin films; AlN; LOBAR design; SiC; aluminum nitride transducer; decoupling; energy storage schemes; high transduction efficiency; quality factors; silicon carbide lateral overtone bulk acoustic resonator; standard CMOS-compatible processes; thin silicon carbide film; ultrahigh quality factor; Acoustics; Electrodes; Films; Q factor; Resonant frequency; Silicon carbide; Temperature sensors;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-9632-7
DOI :
10.1109/MEMSYS.2011.5734543
