Title :
Small-signal analysis of short base transport by transmission line model
Author :
Karamarkovic, Jugoslav P. ; Jankovic, Nebojsa D.
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Abstract :
The small-signal current gain model of short base bipolar transistors has been derived using the transmission line modelling. It has been shown that quasi-ballistic effects occuring in short base minority carrier transport is inherently included in the current gain model. It appears that quasi-ballistic effects in general decrease the static and dynamic current gain. The two approximative asymptotical expressions for static current gain, related to the pure diffusive and pure ballistic transport, has been also derived
Keywords :
bipolar transistors; minority carriers; semiconductor device models; transmission line theory; ballistic transport; diffusive transport; dynamic current gain; minority carrier transport; quasi-ballistic transport; short base bipolar transistor; small-signal analysis; static current gain; transmission line model; Ballistic transport; Bipolar transistors; Boundary conditions; Differential equations; Distributed parameter circuits; Frequency; Scattering; Thermal engineering; Transmission lines; Voltage;
Conference_Titel :
Microelectronics, 1997. Proceedings., 1997 21st International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-3664-X
DOI :
10.1109/ICMEL.1997.625237
