DocumentCode :
2769616
Title :
Design space exploration for robust power delivery in TSV based 3-D systems-on-chip
Author :
Satheesh, Suhas M. ; Salman, Emre
Author_Institution :
High-Speed Fabrics Team, NVIDIA, Santa Clara, CA, USA
fYear :
2012
fDate :
12-14 Sept. 2012
Firstpage :
307
Lastpage :
311
Abstract :
3-D integration technologies offer significant advantages to develop multiprocessor systems-on-chip with embedded memory. Reliable power distribution is a challenging issue in these systems due to multiple planes and through silicon vias (TSVs). The two primary TSV technologies, via-first and vialast, have been evaluated for power delivery in a 32 nm 3D system with eight memory planes and one processor plane. Since the impedance characteristics of via-first and via-last based TSVs are significantly different due to distinct filling materials and dimensions, the power distribution network in each case exhibits different design requirements. A valid design space is identified for both cases. Despite the low parasitic resistance of a via-last TSV, a power network based on via-last TSVs produces signal routing blockages. Furthermore, via-last TSVs exhibit high inductive behavior, producing a non-monotonic design space. It is demonstrated that via-first TSVs can satisfy the power supply noise at the expense of 7.5% additional area as compared to via-last TSVs.
Keywords :
integrated circuit design; multiprocessing systems; system-on-chip; three-dimensional integrated circuits; 3D integration technology; 3D system; 3D system-on-chip; design space exploration; impedance characteristics; low parasitic resistance; multiprocessor systems-on-chip; nonmonotonic design space; power distribution network; power network; power supply noise; processor plane; robust power delivery; signal routing blockages; size 32 nm; through silicon vias; via-first TSV; via-last TSV; Capacitance; Integrated circuit modeling; Metals; Noise; Power supplies; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOC Conference (SOCC), 2012 IEEE International
Conference_Location :
Niagara Falls, NY
ISSN :
2164-1676
Print_ISBN :
978-1-4673-1294-3
Type :
conf
DOI :
10.1109/SOCC.2012.6398327
Filename :
6398327
Link To Document :
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