Title :
A digital neuromorphic VLSI architecture with memristor crossbar synaptic array for machine learning
Author :
Yongtae Kim ; Yong Zhang ; Peng Li
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
This paper presents a reconfigurable digital neuromorphic VLSI architecture for large scale spiking neural networks. We leverage the memristor nanodevice to build an N×N crossbar array to store synaptic weights with significantly reduced area cost. Our design integrates N digital leaky integrate-and-fire (LIF) neurons and the respective on-line learning circuits for a spike timing-dependent learning rule. The proposed analog-to-digital conversion scheme accumulates pre-synaptic weights of a neuron efficiently and reduces silicon area by using only one shared adder for processing LIF operations of N neurons. The proposed architecture is shown to be both area and power efficient. With 256 neurons and 64K synapses, the power dissipation and the area of our design are evaluated as 9.46-mW and 0.66-mm2, respectively, in a 90-nm CMOS technology.
Keywords :
CMOS digital integrated circuits; VLSI; analogue-digital conversion; learning (artificial intelligence); memristors; neural nets; CMOS technology; analog-to-digital conversion scheme; digital LIF neurons; digital leaky integrate-and-fire neurons; large-scale spiking neural networks; machine learning; memristor crossbar synaptic array; memristor nanodevice; online learning circuits; power 9.46 mW; power dissipation; pre-synaptic weights; reconfigurable digital neuromorphic VLSI architecture; silicon area; size 90 nm; spike timing-dependent learning rule; synaptic weights; Arrays; Electric potential; Hardware; Memristors; Neuromorphics; Neurons;
Conference_Titel :
SOC Conference (SOCC), 2012 IEEE International
Conference_Location :
Niagara Falls, NY
Print_ISBN :
978-1-4673-1294-3
DOI :
10.1109/SOCC.2012.6398336