Title :
High frequency 800 MHz oscillators
Author :
Tsang, K.F. ; Yip, P.C.L ; Morgan, G.B.
Author_Institution :
City Polytech. of Hong Kong, Kowloon, Hong Kong
Abstract :
The design and performance of tuned bipolar transistor power oscillators is presented. An efficiency of 54% was obtained with an output power of 26 dBm at 800 MHz and a noise level of -80 dBc/Hz at 10 kHz offset. The design method is an improved version of Kazimierczuk´s procedure
Keywords :
bipolar transistors; microwave oscillators; solid-state microwave circuits; 54 percent; 800 MHz; Kazimierczuk´s procedure; noise level; output power; tuned bipolar transistor power oscillators;
Conference_Titel :
Characterisation of Oscillators esign and Measurement, IEE Colloquium on
Conference_Location :
London
