DocumentCode :
2769987
Title :
Effect of the sputtering parameters on the growth and piezoelectric properties of zinc oxide thin films
Author :
Kutepova, V.P. ; Hall, D.A.
Author_Institution :
Mater. Sci. Centre, Univ. of Manchester Inst. of Sci. & Technol., UK
Volume :
1
fYear :
1998
fDate :
1998
Firstpage :
213
Abstract :
In this paper the potential of zinc oxide (ZnO) thin films as a piezoelectric material for surface acoustic wave (SAW) sensor developments is discussed. ZnO thin films were deposited by RF magnetron sputtering onto Al/SiO2/Si substrate. In highly oriented, transparent films lattice stress could be reduced sufficiently by varying the sputtering pressure and substrate temperature and by the careful selection of the other sputtering parameters. Availability of these structures for SAW device applications has been demonstrated by producing an electrode structure of a one-port resonator. The design and performance of resonators, based on ZnO films is described
Keywords :
II-VI semiconductors; piezoelectric semiconductors; piezoelectric thin films; sputter deposition; surface acoustic wave resonators; surface acoustic wave sensors; zinc compounds; Al; Al/SiO2/Si substrate; RF magnetron sputtering; SAW device applications; SAW sensor; Si; SiO2; ZnO; ZnO thin films; design; electrode structure; growth; highly oriented transparent films; lattice stress; one-port resonator; performance; piezoelectric properties; sputtering parameters; sputtering pressure; substrate temperature; surface acoustic wave; Acoustic sensors; Acoustic waves; Magnetic sensors; Piezoelectric films; Piezoelectric materials; Semiconductor thin films; Sputtering; Surface acoustic waves; Thin film sensors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
ISSN :
1051-0117
Print_ISBN :
0-7803-4095-7
Type :
conf
DOI :
10.1109/ULTSYM.1998.762131
Filename :
762131
Link To Document :
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