Title :
A FDTD method for circuits on high-dielectric constant substrates
Author :
Banciu, M.G. ; Ramer, R.
Author_Institution :
Sch. of Electr. Eng. & Telecommun., New South Wales Univ., Sydney, NSW, Australia
Abstract :
Most commercial computer aided design (CAD) software for microwave planar circuits is based on models of circuit elements that are valid for a limited range of dielectric constant. Therefore designing miniaturized circuits on high dielectric constant substrates requires a full wave analysis approach. This category of substrates mainly contains high dielectric ceramics stable with temperature and the substrates for high temperature superconducting (HTS) thin films. Despite the advances in the finite-difference time domain (FDTD) method applied to planar circuits the practical aspects of the case of high dielectric constant substrates have not been sufficiently studied. This paper presents a FDTD method which can be effectively applied for practical planar circuits on high dielectric substrates. The extension of the FDTD method to this case is very important for the design of high temperature superconducting devices for mobile and satellite communications.
Keywords :
finite difference time-domain analysis; high-temperature superconductors; microstrip circuits; mobile radio; permittivity; radio equipment; satellite communication; substrates; superconducting microwave devices; 0 to 25 GHz; CAD software; FDTD method; HTS thin films; computer aided design software; finite-difference time domain method; high temperature superconducting thin films; high-dielectric constant substrates; microwave planar circuits; miniaturized circuits; mobile communications; satellite communications; Ceramics; Design automation; Dielectric constant; Dielectric substrates; Dielectric thin films; Finite difference methods; High temperature superconductors; High-K gate dielectrics; Microwave circuits; Software design;
Conference_Titel :
Antennas, Propagation and EM Theory, 2000. Proceedings. ISAPE 2000. 5th International Symposium on
Conference_Location :
Beijing, China
Print_ISBN :
0-7803-6377-9
DOI :
10.1109/ISAPE.2000.894764