Title :
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs
Author :
Sangiorgi, Enrico ; Palestri, Pierpaolo ; Esseni, David ; Fiegna, Claudio ; Selmi, Luca
Author_Institution :
Univ. of Bologna, Cesena
Abstract :
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non- conventional device structures and channel materials.
Keywords :
MOSFET; Monte Carlo methods; nanoelectronics; stochastic processes; Monte Carlo approach; Poisson equation; deca-nanometer MOSFET; electrostatic potential; multisubband approach; numerical stability; quantum corrections; quantum-mechanical effects; quasi-ballistic transport; semi-classical carrier transport; transport coupling; transport modeling; CMOS technology; Distribution functions; Electrostatics; MOSFETs; Monte Carlo methods; Numerical stability; Particle scattering; Poisson equations; Quantization; Radio frequency;
Conference_Titel :
Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1125-2
DOI :
10.1109/ESSCIRC.2007.4430248
