Single-grain Si thin-film transistors for analog and RF circuit applications

Author

Saputra, N. ; Danesh, M. ; Baiano, A. ; Ishihara, R. ; Long, J.R. ; Metselaar, J.W. ; Beenakker, C.I.M. ; Karaki, N. ; Hiroshima, Y. ; Inoue, S.

Author_Institution

Delft Univ. of Technol., Delft

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

107

Lastpage

110

Abstract

Single-grain (SG) Si-TFTs fabricated inside a location-controlled grain have SOI-like performance. To validate their potential for circuit application, key analog and RF building blocks are characterized. An operational amplifier (Opamp) and a voltage reference (Vref) demonstrate DC gain of 50 dB and power supply rejection ratio (PSRR) of 50 dB, respectively. With f_T in the GHz range, SG-TFTs enable RF circuit design below 1 GHz. An RF cascode amplifier circuit is demonstrated.

Keywords

elemental semiconductors; network synthesis; operational amplifiers; silicon; thin film transistors; Opamp; RF cascode amplifier circuit; RF circuit applications; RF circuit design; Si; Si-TFT; analog circuit applications; gain 50 dB; location-controlled grain; operational amplifier; power supply rejection ratio; single-grain Si thin-film transistors; voltage reference; Application software; Circuits; Crystallization; Operational amplifiers; Radio frequency; Radiofrequency amplifiers; Substrates; Temperature; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European

Conference_Location

Munich

ISSN

1930-8833

Print_ISBN

978-1-4244-1125-2

Type

conf

DOI

10.1109/ESSCIRC.2007.4430257

Filename

4430257