DocumentCode :
2771014
Title :
Impact of stress on various circuit characteristics in 65nm PDSOI technology
Author :
Suryagandh, Sushant ; Gupta, Mayank ; Wu, Zhi-Yuan ; Krishnan, Srinath ; Pelella, Mario ; Goo, Jung-Suk ; Thuruthiyil, Ciby ; An, Judy X. ; Chen, Brian Q. ; Subba, Niraj ; Zamudio, Luis ; Yonemura, James ; Icel, Ali B.
Author_Institution :
Adv. Micro Devices, Sunnyvale
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
119
Lastpage :
122
Abstract :
Logic performance is improved by creating more stress in the channel in advanced CMOS technologies. Impact of stress on different circuit blocks in a microprocessor chip has not been studied in detail. This paper presents a comprehensive study on the effects of stress and the corresponding process steps on various circuit characteristics. Analog behavior, hysteresis and noise properties are investigated to understand the effect of stress on them. These characteristics play important roles in determining the performances of analog/phy, I/O and PLL blocks respectively. It is shown that the type of process steps used for stress optimization can significantly alter the performance of various circuits.
Keywords :
CMOS integrated circuits; integrated circuit modelling; microprocessor chips; silicon-on-insulator; PDSOI technology; advanced CMOS technologies; analog behavior; circuit blocks; circuit characteristics; hysteresis; logic performance; microprocessor chip; noise properties; size 65 nm; stress optimization; Analog circuits; CMOS logic circuits; CMOS technology; Circuit noise; Delay; Germanium silicon alloys; Hysteresis; MOSFETs; Silicon germanium; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European
Conference_Location :
Munich
ISSN :
1930-8833
Print_ISBN :
978-1-4244-1125-2
Type :
conf
DOI :
10.1109/ESSCIRC.2007.4430260
Filename :
4430260
Link To Document :
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