Title :
IEE Colloquium on `III-V Compound Semiconductor Materials Growth´ (Digest No.062)
Abstract :
The following topics were dealt with: III-V semiconductor wafer substrates; MOVPE grown Bragg stacks for microresonator devices; growth of Bragg reflector LED structures by MOCVD; MOVPE growth of InSb on GaAs; impact of GaInP growth by MOVPE on laser performance; MOVPE of AlGaInP visible emitting materials; high mobility GaAs/AlGaAs 2D electron gases; MBE growth interrupt and temperature studies on doped and undoped quantum wells; MBE growth of AlGaAs/GaAs quantum wires; CBE of InP/InGaAsP; CBE of GaAs/AlGaAs device structures; MOVPE growth for OEIC fabrication
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electron gas; integrated optoelectronics; molecular beam epitaxial growth; semiconductor devices; semiconductor growth; semiconductor junction lasers; semiconductor quantum wells; semiconductor quantum wires; vapour phase epitaxial growth; 2D electron gases; AlGaInP; Bragg reflector LED structures; Bragg stacks; CBE; GaAs-AlGaAs; GaInP; III-V semiconductor wafer substrates; InP-InGaAsP; InSb; MBE growth interrupt; MOCVD; MOVPE; OEIC; epitaxial growth; laser performance; microresonator devices; quantum wells; quantum wires; visible emitting materials;
Conference_Titel :
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location :
London
