Title :
III-V compound wafer substrates
Author_Institution :
MCP Wafer Technol. Ltd., Milton Keynes, UK
Abstract :
The author discusses the bulk crystal properties and wafer surface characteristics of InP and GaAs substrates. The influence of crystal growth techniques on subsequent device processing is considered
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor technology; substrates; GaAs; InP; bulk crystal properties; crystal growth; device processing; semiconductors; wafer substrates; wafer surface characteristics;
Conference_Titel :
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location :
London
