DocumentCode
277103
Title
III-V compound wafer substrates
Author
Grant, I.R.
Author_Institution
MCP Wafer Technol. Ltd., Milton Keynes, UK
fYear
1992
fDate
33683
Firstpage
42370
Lastpage
42371
Abstract
The author discusses the bulk crystal properties and wafer surface characteristics of InP and GaAs substrates. The influence of crystal growth techniques on subsequent device processing is considered
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor technology; substrates; GaAs; InP; bulk crystal properties; crystal growth; device processing; semiconductors; wafer substrates; wafer surface characteristics;
fLanguage
English
Publisher
iet
Conference_Titel
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
167995
Link To Document