Title :
Impact of GaInP growth by MOVPE on laser performance
Author :
Gibbings, C.J. ; Murrell, D.L. ; Cooper, D.M. ; Spurdens, P.C.
Author_Institution :
BT Labs., Ipswich, UK
Abstract :
Ga0.51In0.49P has been studied for use as an alternative to AlGaAs as a laser cladding material. The performance of 980 nm GaInP/GaAs/GaInAs strained layer pump lasers has been found to be highly dependent on the growth parameters of the GaInP layers. Ordering in the Ga/In sublattice appears to be an important factor in determining the usefulness of MOVPE grown GaInP, and the laser results can be correlated with TEM studies of ordering. If the growth conditions are optimised on the basis of these results then laser thresholds are similar to the best achieved with AlGaAs clad 980 nm lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; Ga0.51In0.49P; GaInP-GaAs-GaInAs; MOVPE; TEM; growth conditions; laser cladding material; laser performance; semiconductors; strained layer pump lasers;
Conference_Titel :
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location :
London
