• DocumentCode
    277107
  • Title

    Impact of GaInP growth by MOVPE on laser performance

  • Author

    Gibbings, C.J. ; Murrell, D.L. ; Cooper, D.M. ; Spurdens, P.C.

  • Author_Institution
    BT Labs., Ipswich, UK
  • fYear
    1992
  • fDate
    33683
  • Firstpage
    42491
  • Lastpage
    42494
  • Abstract
    Ga0.51In0.49P has been studied for use as an alternative to AlGaAs as a laser cladding material. The performance of 980 nm GaInP/GaAs/GaInAs strained layer pump lasers has been found to be highly dependent on the growth parameters of the GaInP layers. Ordering in the Ga/In sublattice appears to be an important factor in determining the usefulness of MOVPE grown GaInP, and the laser results can be correlated with TEM studies of ordering. If the growth conditions are optimised on the basis of these results then laser thresholds are similar to the best achieved with AlGaAs clad 980 nm lasers
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; Ga0.51In0.49P; GaInP-GaAs-GaInAs; MOVPE; TEM; growth conditions; laser cladding material; laser performance; semiconductors; strained layer pump lasers;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    III-V Compound Semiconductor Materials Growth, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    167999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=277107