Title :
MBE growth-interrupt and temperature studies on doped and undoped single quantum well pseudomorphic structures
Author :
Kirby, P.B. ; Miller, B.A.
Author_Institution :
GEC-Marconi Mat. Technol. Ltd., Towcester, UK
Abstract :
The paper is concerned with identifying those MBE growth conditions that influence the electron mobility in modulation doped pseudomorphic GaAs-InGaAs-AlGaAs structures. The authors study the effects of growth interruptions and varying growth profiles during deposition. Both doped and undoped GaAs/InGaAs/AlGaAs structures were grown. Variable temperature Hall and low temperature photoluminescence measurements were used to monitor changes in the electron transport
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; GaAs-InGaAs-AlGaAs; Hall effect; MBE growth conditions; doped; electron mobility; electron transport; growth interruptions; photoluminescence; pseudomorphic structures; semiconductors; single quantum well; undoped;
Conference_Titel :
III-V Compound Semiconductor Materials Growth, IEE Colloquium on
Conference_Location :
London
