A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics

Author

Rahman, Ashfaqur ; Shepherd, Paul D. ; Bhuyan, Shaila A. ; Ahmed, Shamim ; Akula, Sai K. ; Caley, Landon ; Alan Mantooth, H. ; Jia Di ; Matthew Francis, A. ; Holmes, James A.

Author_Institution

Univ. of Arkansas, Fayetteville, AR, USA

fYear

2015

fDate

7-14 March 2015

Firstpage

1

Lastpage

10

Abstract

This paper describes the simulation and test results of a family of analog and mixed signal circuits in silicon carbide CMOS technology at temperatures of 300°C and above. As SiC and wide bandgap devices in general grow in popularity for efficient and stable operation in high temperature and harsh environment applications, CMOS SiC integrated circuits can open up a new frontier of opportunity for miniaturization and system dependability. The building block circuits presented here can serve as the basis of rugged SiC system-on-chips for extreme environment applications.

Keywords

CMOS analogue integrated circuits; high-temperature electronics; integrated circuit modelling; integrated circuit testing; mixed analogue-digital integrated circuits; silicon compounds; system-on-chip; wide band gap semiconductors; CMOS analog circuits; CMOS integrated circuits; CMOS mixed signal circuits; CMOS technology; SiC; building block circuits; high temperature electronics; silicon carbide; system-on-chips; wide bandgap devices; CMOS integrated circuits; Field effect transistors; Integrated circuit modeling; Semiconductor device modeling; Silicon carbide; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Aerospace Conference, 2015 IEEE

Conference_Location

Big Sky, MT

Print_ISBN

978-1-4799-5379-0

Type

conf

DOI

10.1109/AERO.2015.7119302

Filename

7119302