Title :
An highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide charge storage stacks
Author :
Man, Tsz Yin ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
A highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide stacks is proposed and demonstrated by numerical device simulation. The operational mechanisms including read, program, erase and inhibit in an array structure are studied in detail. This double storage capability per single cell and highly scalable structure is very suitable for high density NVM application.
Keywords :
MOS memory circuits; MOSFET; NOR circuits; chemical vapour deposition; integrated circuit modelling; programmable logic arrays; random-access storage; semiconductor growth; array structure; double storage capability; electrically isolated oxide-nitride-oxide charge storage stacks; erasing; high density NVM application; numerical device simulation; operational mechanisms; programming; reading; scalable double density nonvolatile memory cell; Dielectrics; Digital cameras; Electrodes; Electronic equipment; Fabrication; MOSFET circuits; Maintenance; Nonvolatile memory; Numerical simulation; Tunneling;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283481
