An highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide charge storage stacks

Author

Man, Tsz Yin ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

51

Lastpage

54

Abstract

A highly scalable double density nonvolatile memory cell using two electrically isolated oxide-nitride-oxide stacks is proposed and demonstrated by numerical device simulation. The operational mechanisms including read, program, erase and inhibit in an array structure are studied in detail. This double storage capability per single cell and highly scalable structure is very suitable for high density NVM application.

Keywords

MOS memory circuits; MOSFET; NOR circuits; chemical vapour deposition; integrated circuit modelling; programmable logic arrays; random-access storage; semiconductor growth; array structure; double storage capability; electrically isolated oxide-nitride-oxide charge storage stacks; erasing; high density NVM application; numerical device simulation; operational mechanisms; programming; reading; scalable double density nonvolatile memory cell; Dielectrics; Digital cameras; Electrodes; Electronic equipment; Fabrication; MOSFET circuits; Maintenance; Nonvolatile memory; Numerical simulation; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283481

Filename

1283481