DocumentCode :
2771559
Title :
Working quantum efficiency of cdte solar cell
Author :
Cheng, Zimeng ; Lo, Kwok ; Opyrchal, Halina ; Pan, Jingong ; Chen, Dongguo ; Tao Zhou ; Wang, Tao Zhou Qi ; Georgiou, George E. ; Chin, Ken K.
Author_Institution :
Apollo CdTe Solar Energy Center (pending), NJIT, Newark, NJ, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
For p-CdTe/n-CdS solar cell, it is reported that the quantum efficiency and the collection efficiency are not only wave length dependent but also most importantly voltage dependent, since the CdTe solar cell is believed to be the diode which has non-shallow acceptors and deep levels where the roles of these levels are not clear. In this study, the quantum efficiency of CdTe solar cell with various optical biases, which is titled as “Working Quantum Efficiency (WQE)”, is measured. The result is compared with industrialized amorphous silicon solar cell. Simulation models are given to explain those measurements. The result shows the measurements of WQE is one of important evaluations for CdTe solar cell as well as it can contribute to its characterization and improvement.
Keywords :
amorphous semiconductors; cadmium compounds; deep levels; silicon; solar cells; CdTe-CdS; collection efficiency; deep levels; industrialized amorphous silicon solar cell; nonshallow acceptors; working quantum efficiency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616372
Filename :
5616372
Link To Document :
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