• DocumentCode
    2771602
  • Title

    Structure and composition of lattice-mismatched III–V epilayers for high-efficiency photovoltaics

  • Author

    Rathi, M. ; Ahrenkiel, S.P. ; Carapella, J.J. ; Wanlass, M.W. ; Steiner, M.

  • Author_Institution
    South Dakota Sch. of Mines & Technol., Rapid City, SD, USA
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    Lattice mis-matched (LMM) multilayered structures were grown using metalorganic chemical vapor deposition (MOCVD) at NREL. Energy dispersive x-ray (EDX) spectrometric mapping was conducted on transmission electron microscope (TEM) sample cross-sections of GaAs1-yPy grades on GaAs substrates, with known layer compositions. The compositions were determined by x-ray diffraction, which serve as standards for EDX. Data were acquired by both TEM spot analysis and 2-D maps in scanning TEM mode. The IP/IAs intensity ratio obtained from EDX, plotted against y/(1-y) obtained from XRD shows a linear slope. We seek to parameterize the variations from these standard samples for accurate composition determination of unknown samples. The quantitative method we are developing is based on principle component analysis (PCA). We anticipate our PCA algorithm will have applications in future growth designs, including heterostructures with multiple quaternary steps, or even continuous grades.
  • Keywords
    III-V semiconductors; MOCVD; X-ray chemical analysis; X-ray diffraction; gallium arsenide; semiconductor epitaxial layers; solar cells; transmission electron microscopy; Energy dispersive x-ray spectrometric mapping; GaAs; GaAs substrates; heterostructures; high-efficiency photovoltaics; lattice-mismatched IIl-V epilayers; metalorganic chemical vapor deposition; multiple quaternary steps; transmission electron microscope; x-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616375
  • Filename
    5616375