DocumentCode :
2771602
Title :
Structure and composition of lattice-mismatched III–V epilayers for high-efficiency photovoltaics
Author :
Rathi, M. ; Ahrenkiel, S.P. ; Carapella, J.J. ; Wanlass, M.W. ; Steiner, M.
Author_Institution :
South Dakota Sch. of Mines & Technol., Rapid City, SD, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Lattice mis-matched (LMM) multilayered structures were grown using metalorganic chemical vapor deposition (MOCVD) at NREL. Energy dispersive x-ray (EDX) spectrometric mapping was conducted on transmission electron microscope (TEM) sample cross-sections of GaAs1-yPy grades on GaAs substrates, with known layer compositions. The compositions were determined by x-ray diffraction, which serve as standards for EDX. Data were acquired by both TEM spot analysis and 2-D maps in scanning TEM mode. The IP/IAs intensity ratio obtained from EDX, plotted against y/(1-y) obtained from XRD shows a linear slope. We seek to parameterize the variations from these standard samples for accurate composition determination of unknown samples. The quantitative method we are developing is based on principle component analysis (PCA). We anticipate our PCA algorithm will have applications in future growth designs, including heterostructures with multiple quaternary steps, or even continuous grades.
Keywords :
III-V semiconductors; MOCVD; X-ray chemical analysis; X-ray diffraction; gallium arsenide; semiconductor epitaxial layers; solar cells; transmission electron microscopy; Energy dispersive x-ray spectrometric mapping; GaAs; GaAs substrates; heterostructures; high-efficiency photovoltaics; lattice-mismatched IIl-V epilayers; metalorganic chemical vapor deposition; multiple quaternary steps; transmission electron microscope; x-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616375
Filename :
5616375
Link To Document :
بازگشت