An unreleased mm-wave Resonant Body Transistor

Author

Wang, Wentao ; Popa, Laura C. ; Marathe, Radhika ; Weinstein, Dana

Author_Institution

Massachusetts Inst. of Technol., Cambridge, MA, USA

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

1341

Lastpage

1344

Abstract

In this work, we present the first fully unreleased Micro-Electro-Mechanical (MEM) resonator. The 1st harmonic longitudinal resonance of a silicon FinFET fully clad in SiO₂ is demonstrated. The device exhibits two resonances at 39 and 41 GHz, corresponding well with simulation results. The quality factor (Q) of 129 at 39 GHz is ~4× lower than that of its released counterpart. Methods to improve Q and reduce spurious modes are introduced. This first demonstration of unreleased resonators in a hybrid MEMS-CMOS technology can provide RF and microwave CMOS circuit designers with active high-Q devices monolithically integrated in Front-End-of-Line (FEOL) processing without the need for post-processing or special packaging.

Keywords

MOSFET; micromechanical resonators; MM-wave resonant body transistor; active high-Q device; hybrid MEMS-CMOS technology; longitudinal resonance; microelectromechanical resonator; microwave CMOS circuit designer; quality factor; silicon FinFET; Acoustics; CMOS integrated circuits; FETs; Logic gates; Resonant frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734682

Filename

5734682