Title :
Spatial selectivity of impurity free vacancy disordering using different dielectric layers for photonic/optoelectronic integrated circuits
Author :
Fu, L. ; Lever, P. ; Tan, H.H. ; Wong-Leung, J. ; Deenapanray, P.N.K. ; Reece, P. ; Gal, M. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
This paper reviews the methods of suppressing interdiffusion during impurity free disordering (IFVD) process by using Ga-doped spin-on glass film, SiO2/GaxOy bi-layer and TiO2/GaxOy bi-layer. The mechanism of interdiffusion suppression based on controlling of group III vacancy generation and diffusion was introduced and results were compared for both quantum well and quantum dot structures. This is crucial for realization of spatial selectivity of IFVD for photonic/optoelectronic integrated circuits.
Keywords :
III-V semiconductors; chemical interdiffusion; dielectric thin films; gallium; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; semiconductor thin films; silicon compounds; titanium compounds; vacancies (crystal); AlGaAs-GaAs; Ga-doped spin-on glass film; SiO2-GaxOy; SiO2/GaxOy bilayer; TiO2-GaxOy; TiO2/GaxOy bilayer; dielectric layers; group III vacancy generation; impurity free vacancy disorder; interdiffusion suppression; optoelectronic integrated circuits; photonic-electronic integrated circuits; quantum dot structures; quantum well; Atom optics; Dielectrics; Impurities; Optical devices; Optical modulation; Optical waveguides; Photonic band gap; Photonic integrated circuits; Quantum dot lasers; Waveguide lasers;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283486
