Analysis of novel wide-dynamic-range logarithmic-response bipolar junction photogate transistor for CMOS imagers

Author

Jin, Xiang Liang ; Chen, Jie ; Qiu, Yu Lin

Author_Institution

Microelectron. R&D Center, Chinese Acad. of Sci., Beijing, China

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

79

Lastpage

82

Abstract

A new photodetector, bipolar junction photogate transistor, is proposed for CMOS imagers. A p⁺n injecting junction is introduced to let the two carriers to take part in carrying the signal charges. Therefore this device can increase the readout rate of the pixel signal charges and the photoelectron transferring efficiency. Logarithmic-response pixel has a wide dynamic range, which makes photo-detector more suitable for imaging the naturally illuminated scenes. Using this new device, a new type of logarithmic pixel circuit has been obtained with the wide dynamic range.

Keywords

CMOS image sensors; bipolar transistors; photodetectors; phototransistors; semiconductor device models; smart pixels; CMOS imagers; carriers; injecting junction; logarithmic-response pixel circuit; photodetector; photoelectron transferring efficiency; signal charges; wide-dynamic-range logarithmic-response bipolar junction photogate transistor; CMOS image sensors; Capacitance; Dynamic range; Electron traps; Image analysis; Layout; P-n junctions; Photodetectors; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283487

Filename

1283487