Title :
Analysis of novel wide-dynamic-range logarithmic-response bipolar junction photogate transistor for CMOS imagers
Author :
Jin, Xiang Liang ; Chen, Jie ; Qiu, Yu Lin
Author_Institution :
Microelectron. R&D Center, Chinese Acad. of Sci., Beijing, China
Abstract :
A new photodetector, bipolar junction photogate transistor, is proposed for CMOS imagers. A p+n injecting junction is introduced to let the two carriers to take part in carrying the signal charges. Therefore this device can increase the readout rate of the pixel signal charges and the photoelectron transferring efficiency. Logarithmic-response pixel has a wide dynamic range, which makes photo-detector more suitable for imaging the naturally illuminated scenes. Using this new device, a new type of logarithmic pixel circuit has been obtained with the wide dynamic range.
Keywords :
CMOS image sensors; bipolar transistors; photodetectors; phototransistors; semiconductor device models; smart pixels; CMOS imagers; carriers; injecting junction; logarithmic-response pixel circuit; photodetector; photoelectron transferring efficiency; signal charges; wide-dynamic-range logarithmic-response bipolar junction photogate transistor; CMOS image sensors; Capacitance; Dynamic range; Electron traps; Image analysis; Layout; P-n junctions; Photodetectors; Silicon; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283487
