Title :
Low-frequency noise in laser-debonded GaN films
Author :
Chan, C.P. ; Leung, B.H. ; Loke, Y.H. ; Man, H.C. ; Yue, T.M. ; Surya, C.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., China
Abstract :
Low-frequency noise was measured from laser-debonded HVPE-grown GaN films. Substantial increase in the noise was seen for the 5 μm thick films, indicating generation of localized states due to laser illumination. For the 20 μm thick films, low-frequency noise measured from the debonded sample is found to be similar to the control sample, indicating the material degradation is limited to the region close to the GaN-sapphire interface.
Keywords :
III-V semiconductors; gallium compounds; laser beam effects; laser noise; localised states; photoluminescence; sapphire; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; 20 micron; 5 micron; GaN-Al2O3; GaN-sapphire interface; laser-debonded GaN films; laser-debonded HVPE-growth; localized states; low-frequency noise; material degradation; photoluminescence; power HEMT; Gallium nitride; Laser noise; Lighting; Low-frequency noise; Noise generators; Noise measurement; Optical materials; Thick films; Thickness control; Thickness measurement;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283488
