2×2 electrooptical switch in silicon-on-insulator waveguide

Author

Yan, Qingfeng ; Yu, Jinzhong ; Chen, Shaowu ; Fan, Zhongchao ; Xia, Jinsong ; Liu, Zhongli

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing, China

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

91

Lastpage

94

Abstract

A 2×2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358 mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7 dB and crosstalk of 4.8 dB has been observed.

Keywords

Mach-Zehnder interferometers; electro-optical modulation; electro-optical switches; elemental semiconductors; optical couplers; optical fabrication; optical waveguides; p-i-n diodes; silicon-on-insulator; 3 dB; 358 mA; 4.8 dB; 7.7 dB; Mach-Zehnder interferometer electrooptical switch integration; PIN structure; Si; carriers plasma dispersion effect; combiner; crosstalk; extinction ratio; injection current; light modulation; multimode interference couplers; silicon-on-insulator waveguide; splitter; Couplers; Dispersion; Electrooptical waveguides; Extinction ratio; Fabrication; Interference; Optical modulation; Plasma waves; Silicon on insulator technology; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283490

Filename

1283490