DocumentCode
2771713
Title
A mixed-signal readout chip for a 7-cell Si-Drift detector in 0.35-μm BiCMOS technology
Author
Diehl, Inge ; Hansen, Karsten ; Reckleben, Christian
Author_Institution
Deutsches Elektronen-Synchrotron (DESY), Hamburg
fYear
2007
fDate
11-13 Sept. 2007
Firstpage
296
Lastpage
299
Abstract
This paper describes a mixed-signal seven-channel ASIC in 0.35-mum BiCMOS technology for the readout of Si-drift detectors used in X-ray spectroscopy. An integral count rate of more than four million pulses per second can be achieved. Count rate- and photon energy-related changes of the input pulse shape are compensated by a baseline-holding circuit, where the baseline instability remains below 1%. Within an input dynamic range between 1.9 mV and 7.2 mV a non-linearity below 1% can be reached. The equivalent input-noise voltage amounts to 31 muVrms. At maximum output voltage a channel-to-channel crosstalk of ~0.3% was measured. The power consumption of the readout chip is ~15 mW per channel. The functionalities of the main circuit blocks as well as experimental results are presented.
Keywords
BiCMOS integrated circuits; X-ray spectroscopy; mixed analogue-digital integrated circuits; readout electronics; ASIC; BiCMOS technology; X-ray spectroscopy; baseline-holding circuit; count rate change; mixed-signal readout chip; photon energy change; silicon-drift detector; size 0.35 mum; voltage 1.9 mV to 7.2 mV; Application specific integrated circuits; BiCMOS integrated circuits; Dynamic range; Pulse circuits; Pulse shaping methods; Shape; Spectroscopy; Voltage; X-ray detection; X-ray detectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European
Conference_Location
Munich
ISSN
1930-8833
Print_ISBN
978-1-4244-1125-2
Type
conf
DOI
10.1109/ESSCIRC.2007.4430302
Filename
4430302
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