Title :
Low chirp, high speed, electro-absorption modulator
Author :
Kimber, E.M. ; Moule, D.J. ; Glew, R.W. ; Patel, B.L. ; Gibbon, M.A. ; Hadjifotiou, A.P.
Author_Institution :
BNR Europe Ltd., Harlow, UK
Abstract :
The authors describe a GaInAs/GaInAlAs electroabsorption modulator on an InP substrate suitable for operation at 5 Gbit/s. A smooth frequency response and a good eye diagram are obtained using the modulator. Transmission experiments suggest that the modulator has low chirp. A reduction in the device´s capacitance would allow operation at 10 Gbit/s
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium compounds; indium compounds; optical communication equipment; optical modulation; GaInAs-GaInAlAs-InP; III-V semiconductors; electroabsorption modulator; good eye diagram; low chirp; smooth frequency response;
Conference_Titel :
Sources for Very High Bit Rate Optical Communication Systems, IEE Colloquium on
Conference_Location :
London
