A Wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors

A 1/3-inch, 800^H times 600^v pixels, 5.6 times 5.6 mum² color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 mum 2P3M CMOS process has been reported. It achieves high S/N ratio and fully linear response and over 180 dB dynamic range performances in the incident light range from about 1.4times10^-2 Ix to about 2.4times10⁷ Ix.