DocumentCode :
2771977
Title :
V-band balanced resistive mixer in 65-nm CMOS
Author :
Varonen, Mikko ; Kärkkäinen, Mikko ; Halonen, Kari A I
Author_Institution :
Helsinki Univ. of Technol., Espoo
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
360
Lastpage :
363
Abstract :
We report a wideband resistive mixer fabricated in 65-nm CMOS for 60-GHz frequency range. The local oscillator signal balancing is implemented with an on-chip spiral balun. The broadband response of the balun enables wideband local oscillator tuning range. The mixer topology is suitable for both up- and downconversion. We present the on-wafer measurement results in both of these mixing modes. In downconversion, the mixer achieved 12.5 dB of conversion loss and +5 dBm of 1-dB input compression point. In upconversion, the measured conversion loss was 13.5 dB with -19 dBm of 1-dB output compression point. The local oscillator suppression was better than 34 dB for an LO frequency from 51 to 62 GHz. The size of the mixer including pads is 0.47 mm2.
Keywords :
CMOS integrated circuits; mixers (circuits); network topology; oscillators; CMOS; V-band balanced resistive mixer; broadband response; frequency 51 GHz to 62 GHz; local oscillator signal balancing; local oscillator suppression; loss 12.5 dB; loss 13.5 dB; mixer topology; on-chip spiral balun; on-wafer measurement; size 65 nm; wideband resistive mixer; Bandwidth; CMOS technology; Circuits; Dielectric substrates; Frequency; Impedance matching; Local oscillators; Millimeter wave technology; Mixers; Spirals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conference, 2007. ESSCIRC 2007. 33rd European
Conference_Location :
Munich
ISSN :
1930-8833
Print_ISBN :
978-1-4244-1125-2
Type :
conf
DOI :
10.1109/ESSCIRC.2007.4430318
Filename :
4430318
Link To Document :
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